FDR838P datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

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* -8 A, -20 V. RDS(ON) = 0.017 Ω @ VGS = -4.5 V RDS(ON) = 0.024 Ω @ VGS = -2.5 V Low gate charge (30nC typical). Fast switching speed. High pe.

Application

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* Load switch Motor driving Power Management D S D S 5 6 G 4 3 2 1 7 8 SuperSOT -8 TM D D D A.

Description

These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

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